29/07/2026
As semiconductor devices scale in complexity, failure analysis increasingly depends on more than high-resolution imaging alone.
In a newly published article, Peter Gnauck, Alexander Ost, and Torsten Richter present an automated hyperspectral SIMS approach that combines nanoscale spatial resolution, high chemical sensitivity, and automated defect localization.
The paper shows how complete mass spectra acquired at every image pixel can reveal buried contamination, isotopic distributions, and material variations that are difficult to detect using conventional methods. Automated navigation based on GDSII layouts and KLARF inspection data further streamlines the path from defect detection to chemical characterization.
Examples include sodium contamination analysis within buried vias and 3D chemical reconstruction of critical device features, demonstrating new possibilities for semiconductor failure analysis and process characterization.
Read the whole article here: https://srcpublishers.com/biosensors-and-bioelectronics-re/article/view/7831/8163